VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM
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United States of America Patent
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Issued Date -
Aug 7, 2014
app pub date -
Apr 4, 2014
filing date -
Jun 8, 2009
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Abandoned
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Abstract
A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.
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