FILM DEPOSITION MATERIAL, SEALING FILM USING THE SAME AND USE THEREOF

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United States of America Patent

SERIAL NO

14342834

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Abstract

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The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.

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Patent Owner(s)

Patent OwnerAddress
TOSOH CORPORATIONSHUNAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hara, Daiji Kanagawa, JP 13 112
Shimizu, Masato Kanagawa, JP 49 314

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