Ga2O3 SEMICONDUCTOR ELEMENT
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United States of America Patent
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Issued Date -
Aug 7, 2014
app pub date -
Sep 7, 2012
filing date -
Sep 8, 2011
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Abandoned
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Abstract
Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MESFET (10), which includes: an n-type α-(AlxGa1-x)2O3 single crystal film (3), which is formed on an α-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an α-(AlxGa1-x)2O3 single crystal (0≦x≦1); a source electrode (12) and a drain electrode (13), which are formed on the n-type α-(AlxGa1-x)2O3 single crystal film (3); and a gate electrode (11), which is formed on a region between the source electrode (12) and the drain electrode (13) on the n-type α-(AlxGa1-x)2O3 single crystal film (3).
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