METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS
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United States of America Patent
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Aug 7, 2014
app pub date -
Apr 3, 2014
filing date -
Jun 3, 2011
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Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted.
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