COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS FOR CYCLING ROBUSTNESS AND DATA RETENTION
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 24, 2014
app pub date -
Mar 15, 2013
filing date -
Jan 23, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A memory device is disclosed. The memory device comprises a first metal layer and a first metal oxide layer coupled to the first metal layer. The first metal layer is also coupled to a second metal oxide, which in turn is couple to a second metal layer. The formation of the first metal oxide layer may occur in-situ when the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer. Control of the oxygen vacancy or ion concentrations of the first metal oxide layer and the second metal oxide layer is utilized in the information and the operation of the memory device. Selection of a dielectric constant and a thickness of the first and second metal oxide layer may be utilized to result in similar electrical field stress across the first metal oxide layer and the second metal oxide layer and improve the cycling robustness and data retention for the memory device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully