BORON-DOPED ZINC OXIDE SPUTTERING TARGET AND ITS APPLICATION
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United States of America Patent
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Issued Date -
Jul 24, 2014
app pub date -
Jan 22, 2013
filing date -
Jan 22, 2013
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Abstract
A boron-doped zinc oxide sputtering target, BZO sputtering target, is provided to deposit a BZO film by direct current sputtering. The BZO sputtering target has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic % and a second phase ranging from 2% to 25% relative to a total area of the matrix phase and the second phase. Accordingly, a BZO film having a transmittance higher than 80% within a wavelength from 400 nanometers to 1100 nanometers and a resistivity less than 1×10−2 Ω-cm can be prepared by DC sputtering the BZO sputtering target.
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