Lasers With InGaAsP Quantum Wells And GaAsP Barrier Layers
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United States of America Patent
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Jul 17, 2014
app pub date -
Jan 14, 2013
filing date -
Jan 14, 2013
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Abstract
A laser can include an active region having: one or more quantum wells having InGaAsP; and two or more quantum well barriers having GaAsP bounding the one or more quantum wells, wherein the active region is devoid of Al. The laser emits light having about 850 nm. The one or more quantum wells can have a composition InxGa1-xAs1-yPy according to Equation 1: y=0.0018567*QW+1.18*x−0.14373, where QW is the width of the quantum well in Angstroms; x is mole fraction of In; and y is mole fraction of P or +/−0.1 thereof. The two or more quantum well barriers have a GaAs1-zPz composition with z ranging from about 0.30 to about 0.60, where 0.45 can be optimal. The two or more quantum well barriers have a thickness of about 30 to 60 Angstroms.
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