STACKED STRUCTURE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 17, 2014
app pub date -
Jan 14, 2014
filing date -
Jan 17, 2013
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a capacitor formed in a semiconductor substrate of a first conductivity type. The capacitor includes: a heavily-doped layer of a second conductivity type placed over the substrate, a first insulating layer placed over the heavily-doped layer of the second conductivity type, and a first metal layer placed over the first insulating layer. The semiconductor device further includes comprises a second insulating layer deposited over the capacitor and at least one resistor formed over the second insulating layer. The resistor includes a layer of a resistive material region arranged between two regions of a second metal layer.
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