SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIAL

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United States of America Patent

APP PUB NO 20140192592A1
SERIAL NO

13885894

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Abstract

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The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 02Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES200050 NO 865 CHANGNING ROAD SHANGHAI CHANGNING DISTRICT SHANGHAI CITY SHANGHAI CITY 200050

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Songlin Shanghai, CN 9 29
Peng, Cheng Shanghai, CN 95 261
Rao, Feng Shanghai, CN 41 642
Ren, Kun Shanghai, CN 5 36
Song, Zhitang Shanghai, CN 31 358
Wu, Liangcai Shanghai, CN 5 12
Zhou, Xilin Shanghai, CN 8 4
Zhu, Min Shanghai, CN 244 15096

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