SPAD SENSOR CIRCUIT WITH BIASING CIRCUIT
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United States of America Patent
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Issued Date -
Jul 10, 2014
app pub date -
Jan 8, 2014
filing date -
Jan 9, 2013
priority date (Note) -
Abandoned
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Abstract
A deep SPAD structure uses the substrate as the anode terminal of its multiplication p-n junction. A bias voltage for the SPAD (in excess of the SPAD's breakdown voltage) is coupled to the SPAD's cathode terminal. The bias voltage is generated by a charge pump circuit which is also integrated on the substrate. The charge pump circuit is configured to isolate the bias voltage on the cathode terminal. A triple well CMOS process is used to isolate the transistors of the charge pump circuit from the substrate.
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