MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE
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United States of America Patent
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Issued Date -
Jul 3, 2014
app pub date -
Jan 2, 2013
filing date -
Jan 2, 2013
priority date (Note) -
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Abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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