SINGLE-ENDED SENSE AMPLIFIER CIRCUIT
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United States of America Patent
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Issued Date -
Jun 26, 2014
app pub date -
Dec 23, 2012
filing date -
Dec 23, 2012
priority date (Note) -
Abandoned
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Abstract
A single-ended sense amplifier and a method for reading a memory cell are disclosed. The method includes the following steps. A bit line is charged according to a control signal. Thereafter, whether the dropoff time of the bit line voltage is greater or less than a predetermined time is deteremined. When the dropoff time of the voltage of the bit line is less than the predetermined time period, a first operation is sensed. On the other hand, when the dropoff time of the voltage of the bit line is greater than the predetermined time period, a second operation is sensed. The dropoff time of the voltage of the bit line is determined according to a parasitic capacitance on the bit line. A logic level of a sensing transistor circuit is retained and an output data signal according to the operation sensed is generated.
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