Double-layer electrode device
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United States of America Patent
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Dec 30, 2014
Issued Date -
N/A
app pub date -
Dec 27, 2012
filing date -
Dec 20, 2012
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Abstract
A double-layer electrode device includes an electrode bottom layer formed on a transparent substrate, and an electrode top layer formed on the electrode bottom layer. First electrodes of the electrode bottom layer are separated from each other, and second electrodes of the electrode bottom layer are connected via second conductive connecting portions. An insulating block is formed on the second conductive connecting portion. Second electrodes of the electrode top layer are separated from each other, and first electrodes of the electrode top layer are connected via first conductive connecting portions, which are disposed cross the insulating blocks, respectively.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HENGHAO TECHNOLOGY CO LTD | NO 2-1 WENHUA RD HSINCHU INDUSTRIAL PARK HUKOU TOWNSHIP HSINCHU COUNTY 30352 |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Sun, Hsun Ming | Taichung, TW | 1 | 6 |
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