Ultrananocrystalline Diamond Films With Optimized Dielectric Properties For Advanced RF MEMS Capacitive Switches
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United States of America Patent
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Jun 19, 2014
app pub date -
Dec 7, 2012
filing date -
Apr 7, 2010
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Abstract
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
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