CONTINUOUS METAL SEMICONDUCTOR ALLOY VIA FOR INTERCONNECTS
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United States of America Patent
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app pub date -
Feb 24, 2014
filing date -
Aug 26, 2008
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Abandoned
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Abstract
A contact structure is disclosed in which a continuous metal semiconductor alloy is located within a via contained within a dielectric material. The continuous semiconductor metal alloy is in direct contact with an upper metal line of a first metal level located atop the continuous semiconductor metal alloy and at least a surface of each source and drain diffusion region located beneath the continuous metal semiconductor alloy. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each source and drain region, and a vertical pillar portion extending upward from the lower portion.
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