COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
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United States of America Patent
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Issued Date -
Jun 19, 2014
app pub date -
Aug 22, 2013
filing date -
Aug 28, 2012
priority date (Note) -
Abandoned
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Abstract
An epitaxial structure on a substrate includes a gallium nitride buffer layer over the substrate and a graded channel layer over the gallium nitride layer. The graded channel layer consists essentially of InxGa1-xN wherein the value of x gets smaller from a first surface of the channel layer proximate to a buffer layer to a second surface remote from the buffer layer.
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