P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
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Feb 20, 2014
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Dec 10, 2009
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Abstract
A p-AlGaN layer doped with magnesium is provided that includes an aluminum composition ratio x of 0.2 or more and less than 0.5 and a carrier concentration of 2.5×1017/cm3 or more. A Group III nitride semiconductor light emitting device including the p-AlxGa1-xN layer is also provided.
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