METHOD FOR POLISHING SILICON WAFER AND POLISHING AGENT

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United States of America Patent

APP PUB NO 20140162456A1
SERIAL NO

14236858

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention is directed to a method for polishing a silicon wafer, the method comprising: polishing the silicon wafer by bringing the silicon wafer into sliding contact with a polishing pad attached to a turn table while supplying a polishing agent stored in a tank to the polishing pad; and circulating the polishing agent to recover the supplied polishing agent in the tank, wherein the silicon wafer is polished while adjusting a concentration of silicate ions contained in the polishing agent in the tank to be within a predetermined range. The present invention provides a polishing agent having a high polishing rate that enables the polishing rate to be kept constant among polishing batches, and a method for polishing a silicon wafer accurately with a target polishing stock removal or a target finishing thickness by using the polishing agent.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU HANDOTAI CO LTD2-1 OHTEMACHI 2-CHOME CHIYODA-KU TOKYO 1000004

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawamata, Takao Nishishirakawa, JP 1 3
Oba, Shigeru Nishishirakawa, JP 6 23

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