High Bandwidth High Sensitivity CMOS Trans-Impedance Amplifier
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United States of America Patent
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Issued Date -
Jun 12, 2014
app pub date -
Dec 9, 2013
filing date -
Dec 10, 2012
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Abandoned
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Abstract
A CMOS trans-impedance amplifier (TIA) in accordance with the present disclosure can achieve improved bandwidth and sensitivity by utilizing novel shunt-shunt feedback and inductor peaking. The proposed design simultaneously improves 10-Gbps TIA performance in terms of bandwidth and sensitivity, while the TIA may be fabricated through a standard 0.13 μm CMOS process. Performance of the TIA in accordance with the present disclosure is much better than that of conventional CMOS TIA in the 10-Gbps CMOS TIA design and applications.
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