HIGH-EFFICIENCY BANDWIDTH PRODUCT GERMANIUM PHOTODETECTOR
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United States of America Patent
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Issued Date -
Jun 12, 2014
app pub date -
Dec 10, 2012
filing date -
Dec 10, 2012
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Abandoned
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Abstract
A high-efficiency bandwidth product germanium photodetector includes a silicon substrate having an opening-down three-sided groove formed by etching; a metallic reflective mirror layer formed by plating along an internal periphery of the opening-down three-sided groove of the silicon substrate; a light absorbent layer between the metallic reflective mirror layer and a dielectric reflective mirror layer. The light absorbent layer can be p-i-n type or other types. By the use of the critical coupling of resonant cavity, all the incident lights can be completely obstructed in the cavity between the metallic reflective mirror layer and the dielectric reflective mirror layer to reach a critical coupling which means 100% absorption efficiency can be achieved without light leakage. Thus on the basis of the critical coupling, the trade-off between bandwidth and efficiency can be broken through to reach high responsivity and high bandwidth up to 50 GHz by decreasing the germanium layer thickness without sacrificing the light-switch-to-electro absorption efficiency.
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