RF LDMOS DEVICE AND METHOD OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Jun 12, 2014
app pub date -
Dec 6, 2013
filing date -
Dec 7, 2012
priority date (Note) -
Abandoned
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Abstract
A radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) device is disclosed, which includes: a gate structure on a surface of a substrate; and a source region and a drain region beneath the surface of the substrate, the source region and the drain region formed on opposite sides of the gate structure, wherein the gate structure includes a first section proximal to the source region and a second section proximal to the drain region, and wherein the first section of the gate structure has a dopant concentration at least one decimal order higher than a dopant concentration of the second section of the gate structure. A method of forming an RF LDMOS device is also disclosed. With the gate structure including two sections having different dopant concentrations, the present invention is capable of reducing the hot carrier injection effect while possessing a low on-resistance.
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