NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS
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United States of America Patent
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Sep 23, 2013
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Aug 14, 2012
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Abstract
A method for forming a non-volatile memory device includes disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material, forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer, disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer, disposing an active metal layer comprising a noble metal material upon at least a portion of the layer, and forming a second conductive material in electrical contact with the active metal layer.
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