GALLIUM NITRIDE SUBSTRATE AND METHOD FOR FABRICATING THE SAME
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Issued Date -
Jun 5, 2014
app pub date -
Dec 4, 2013
filing date -
Dec 4, 2012
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Abandoned
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Abstract
Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer.
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