ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME
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United States of America Patent
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Issued Date -
Jun 5, 2014
app pub date -
Jun 7, 2013
filing date -
Jun 7, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An epitaxial structure, such as an enhancement-mode high electron mobility transistor (HEMT) includes a first barrier layer over an aluminum gallium nitride channel layer. The first barrier layer is formed at a first temperature and is overlaid by a second barrier layer formed at a second temperature that is lower than that of the first temperature. The first barrier layer acts as an etch stop when forming a gate recess in the second barrier layer by a wet or dry etching.
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| WO | A1 | WO2013185088 | Jun 07, 2013 |
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Cited Art Landscape
Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 7.09 % this patent is cited more than
- 11 Age