STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS

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United States of America Patent

SERIAL NO

14175561

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Abstract

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Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer. The materials described herein can be effectively used for the formation of doped contacts for crystalline silicon solar cells, thin film silicon solar cells, electronic devices, such as printed electronics, and other useful products.

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Patent Owner(s)

Patent OwnerAddress
NANOGRAM CORPORATIONMILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiruvolu, Shivkumar San Jose, US 56 1135
Li, Weidong San Jose, US 97 1065
Liu, Guojun Suzhou, CN 44 695
Srinivasan, Uma Mountain View, US 51 782

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