METHOD FOR WASHING SEMICONDUCTOR MANUFACTURING APPARATUS COMPONENT, APPARATUS FOR WASHING SEMICONDUCTOR MANUFACTURING APPARATUS COMPONENT, AND VAPOR PHASE GROWTH APPARATUS
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United States of America Patent
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Mar 15, 2012
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May 19, 2011
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A semiconductor manufacturing apparatus component (101), to which a nitride semiconductor expressed by a general formula of AlxInyGa1-x-yN (provided that, x and y satisfy relationships of 0≦x<1, 0≦y<1, and 0≦x+y<1) adheres, is disposed inside a washing apparatus (100) provided with a gas introducing pipe (104) and a gas discharging pipe (105). After the inside of the apparatus is set to a decompressed state, a halogen-containing gas is introduced from the gas introducing pipe (104) to set a pressure inside the apparatus to be equal to or more than 10 kPa and equal to or less than 90 kPa. Then, the halogen-containing gas is retained inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component (101).
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