BACK CONTACT TO FILM SILICON ON METAL FOR PHOTOVOLTAIC CELLS

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United States of America Patent

SERIAL NO

14173324

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Systems and Methods for back contact to film silicon on metal for photovoltaic cells are provided. In one embodiment, a method for creating a conductive pathway in a photovoltaic cell comprises: obtaining a layered photovoltaic device comprising: a metal substrate with a crystal orientation; a crystal semiconductor layer with the crystal orientation; and a heteroepitaxially grown buffer layer positioned between the substrate and the crystal semiconductor layer; and forming one or more conductive pathways between the crystal semiconductor layer and the metal substrate, the pathways being through at least a portion of the buffer layer.

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Patent Owner(s)

Patent OwnerAddress
ALLIANCE FOR SUSTAINABLE ENERGY LLCC/O NATIONAL RENEWABLE ENERGY LABORATORY 15013 DENVER WEST PARKWAY GOLDEN CO 80401

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Branz, Howard M Golden, US 22 215
Stradins, Pauls Golden, US 20 44
Teplin, Charles W Golden, US 4 35

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