SILICON OXYNITRIDE FILM FORMATION METHOD AND SUBSTRATE EQUIPPED WITH SILICON OXYNITRIDE FILM FORMED THEREBY
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United States of America Patent
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May 8, 2014
app pub date -
Jun 22, 2011
filing date -
Jun 22, 2011
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Abstract
The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
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