B4-FLASH DEVICE AND THE MANUFACTURING METHOD THEROF
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United States of America Patent
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Issued Date -
May 8, 2014
app pub date -
Nov 1, 2013
filing date -
Nov 2, 2012
priority date (Note) -
Abandoned
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Abstract
The invention provides a B4-flash device and the manufacture method thereof, wherein the device comprises a substrate, a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer, and all those layers are disposed on the substrate in sequence. The first silicon oxide layer comprises a first section, a second section and a third section, and all those sections are along the channel direction in sequence. The thickness ratio among the first section, the second section and the third section is (1.5-2.5):(0.8-1.2):(1.5-2.5). The embodiments of the present invention use the non-uniform silicon oxide to slow down the degeneration of the silicon oxide and to relieve the effect of the programming of the electron injection and the erasing of the holes injection as well. As a result, the reliability of the device is improved.
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