ALN Substrate And Method For Producing Same
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United States of America Patent
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app pub date -
Jan 10, 2014
filing date -
Jul 14, 2011
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Abstract
An AlN substrate with excellent heat transfer efficiency between it and another member to be bonded to a bonding surface of the AlN substrate. The AlN substrate is composed of an AlN sintered body containing group 2A and 3A elements, and the surface roughness Ra of the bonding surface is 3 nm or less, and, in voids having long diameters of 0.25 μm or more, the mean value is 1.5 μm or less, and the maximum value is 1.8 μm or less. A method for producing the AlN substrate includes sintering a precursor formed of a sintering material that contains 88.7 to 98.5 mass % with respect to AlN, 0.01 to 0.3 mass % with respect to a group 2A element in oxide equivalent, and 0.05 to 5 mass % with respect to a group 3A element in oxide equivalent to form a sintered body, and applying HIP treatment onto the sintered body.
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