LOW DAMAGE PHOTORESIST STRIP METHOD FOR LOW-K DIELECTRICS
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Oct 29, 2013
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Oct 14, 2008
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Abstract
Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.
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