Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
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United States of America Patent
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Issued Date -
May 1, 2014
app pub date -
Oct 25, 2013
filing date -
Oct 29, 2012
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Abandoned
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Abstract
The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.
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