METHOD AND APPARATUS FOR FABRICATING FREE-STANDING GROUP III NITRIDE CRYSTALS
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United States of America Patent
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Issued Date -
May 1, 2014
app pub date -
May 31, 2012
filing date -
May 31, 2011
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Abandoned
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Abstract
The method for fabricating a free-standing group III nitride plate (6) comprises the steps of growing at a growth temperature within a growth reactor (7) a first group III nitride layer (2) on a foreign growth substrate (1); growing at the growth temperature within the growth reactor (7) a second group III nitride layer (5) on the first group III nitride layer (2); and separating by laser lift-off the second group III nitride layer (5) from the growth substrate (1) so as to form a free-standing group III nitride plate (6). According to the present invention, the step of separating the second group III nitride layer (5) from the growth substrate (6) is performed at the growth temperature and within the growth reactor (7), and the method further comprises a step of treating the first group III nitride layer (1) by laser treatment at the growth temperature within the growth reactor (7) so as to provide stress relaxation areas (4) in the first group III nitride layer (2).
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