METHOD OF DEPOSITING AN AMORPHOUS SILICON FILM
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United States of America Patent
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N/A
Issued Date -
Apr 24, 2014
app pub date -
Oct 17, 2013
filing date -
Oct 18, 2012
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method is for depositing in a chamber an amorphous silicon layer on a surface of a semiconducting or insulating substrate. In the method, the surface is pretreated with a NH3 plasma prior to deposition of the amorphous silicon layer.
First Claim
Other Claims data not available
Family
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| GB | D0 | GB201218697 | Oct 18, 2012 |
| TW | A | TW201423841 | Oct 11, 2013 |
| EP | A1 | EP2722871 | Oct 16, 2013 |
| KR | A | KR20140049952 | Oct 18, 2013 |
| CN | A | CN103938179 | Oct 18, 2013 |
| JP | A | JP2014086730 | Oct 18, 2013 |
International Classification(s)
- 2013 Application Filing Year
- H01L Class
- 22267 Applications Filed
- 20713 Patents Issued To-Date
- 93.03 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 7.09 % this patent is cited more than
- 11 Age