METHOD OF DEPOSITING AN AMORPHOUS SILICON FILM

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United States of America Patent

APP PUB NO 20140113439A1
SERIAL NO

14056529

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Abstract

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A method is for depositing in a chamber an amorphous silicon layer on a surface of a semiconducting or insulating substrate. In the method, the surface is pretreated with a NH3 plasma prior to deposition of the amorphous silicon layer.

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Patent Owner(s)

Patent OwnerAddress
SPTS TECHNOLOGIES LIMITEDCOED RHEDYN RINGLAND WAY NEWPORT NP18 2TA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIU, YUFEI SWANSEA, GB 29 65
PATEL, JASH BRISTOL N. SOMERSET, GB 7 28

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