RANDOM ACCESS MEMORY DEVICE AND MANUFACTURING METHOD FOR NODES THEREOF
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United States of America Patent
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Issued Date -
Apr 24, 2014
app pub date -
Mar 15, 2013
filing date -
Oct 19, 2012
priority date (Note) -
Abandoned
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Abstract
A manufacturing method for the nodes of the RAM device, includes the steps as follows: forming a STI layer on a substrate to divide the substrate into several active areas; sequentially forming a first insulating layer and a hard mask layer on the substrate; etching the first insulating layer to form a first hole for exposing the STI layer and partial of the active areas; filling a conductive material in the first hole to form a conductor; forming a protective layer on the top surface of the conductor, wherein each protective layer has an opening aligning the STI layer; etching the conductor from the opening until the STI layer to form a second hole for exposing the STI layer, wherein each conductor is divided into two nodes by the second hole arranged therebetween; and forming a second insulating layer in the second hole for electrically isolating the nodes.
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