METHOD OF PRODUCING SULFIDE COMPOUND SEMICONDUCTOR BY USE OF SOLVOTHERMAL METHOD AND ROD-LIKE CRYSTAL OF SULFIDE COMPOUND SEMICONDUCTOR
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United States of America Patent
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Issued Date -
Apr 24, 2014
app pub date -
Jun 6, 2012
filing date -
Jun 6, 2011
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Abandoned
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Abstract
The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.
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