METHOD OF GROWING SILICON SINGLE CRYSTAL
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 24, 2014
app pub date -
Nov 16, 2012
filing date -
Jan 5, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully