BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES

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United States of America Patent

SERIAL NO

14107780

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Abstract

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Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

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Patent Owner(s)

Patent OwnerAddress
NANOGRAM CORPORATIONMILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hieslmair, Henry San Francisco, US 25 437
Pakala, Neeraj Cupertino, US 5 64
Srinivasan, Uma Mountain View, US 51 782
Zhou, Xin San Jose, US 465 3245

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