Transistor Device and Method for Producing a Transistor Device
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United States of America Patent
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Apr 17, 2014
app pub date -
Oct 15, 2012
filing date -
Oct 15, 2012
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Abstract
A transistor device includes at least one transistor cell. The at least one transistor cell includes a semiconductor fin, and a source region, a drain region, a drift region and a body region in the semiconductor fin. The body region is arranged adjacent the source region and the drift region in a first direction of the semiconductor fin. The source region is arranged adjacent the drift region in a second direction of the semiconductor fin and dielectrically insulated from the drift region by a dielectric layer. The drift region is arranged adjacent the drain region in the first direction and has a doping concentration lower than a doping concentration of the drain region. A gate electrode is adjacent the body region in a third direction of the semiconductor fin.
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