Random Doping Fluctuation Resistant FinFET
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 17, 2014
app pub date -
Oct 10, 2013
filing date -
Oct 15, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Calculated Rating
|
US Family Size
|
Non-US Coverage
|
Abstract
An improved fin field-effect transistor (FinFET) is built on a compound fin, which has a doped core and lightly doped epitaxial channel region between that core and the gate dielectric. The improved structure reduces FinFET random doping fluctuations when doping is used to control threshold voltage. Further, the transistor design affords better source and drain conductance when compared to prior art FinFETs. Three representative embodiments of the key structure are described in detail.
First Claim
Other Claims data not available
Family
+
−
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| WO | A1 | WO2014062586 | Oct 14, 2013 |
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 9 Citation Count
- H01L Class
- 7.09 % this patent is cited more than
- 11 Age