Semiconductor device and method of preventing latch-up in a charge pump circuit
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United States of America Patent
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Jun 28, 2016
Grant Date -
Apr 17, 2014
app pub date -
Sep 13, 2013
filing date -
Oct 17, 2012
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Abstract
A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell.
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