Resistive Memory Based on TaOx Containing Ru Doping and Method of Preparing the Same
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United States of America Patent
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Issued Date -
Apr 17, 2014
app pub date -
Jul 6, 2011
filing date -
Jul 6, 2011
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Abandoned
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Abstract
The present invention pertains to the technical field of semi-conductor memory. More particularly, the invention relates to a resistive memory based on TaOx containing Ru doping. The resistive memory comprises an upper electrode, a lower electrode and a TaOx based storage medium layer containing Ru doping and provided between the upper electrode and the lower electrode. In the storage medium layer based on TaOx containing Ru doping, the position at which conductive filaments are formed in the storage medium layer based on TaOx and their number can be effectively controlled through the distributed Ru element, thus avoiding the possibility of random formation. Therefore, the storage performance is more stable and fluctuation of device characteristic parameter is small. Meanwhile, an integration with copper interconnection process at or below 32 nm is made easier.
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