A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELL
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United States of America Patent
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Issued Date -
Apr 17, 2014
app pub date -
Nov 14, 2011
filing date -
Nov 16, 2010
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer (3), b1) depositing a first intrinsic a-Si:H layer (21) at a first deposition rate, b2) depositing a second intrinsic a-Si:H layer (22) at a second deposition rate, and c) depositing a negatively doped Si layer (5), whereby the second deposition rate is greater than the first deposition rate. The thin film solar cell manufactured is characterized by an increased initial and stabilized efficiency while at the same time the overall deposition rate, even by depositing two different intrinsic layers (21, 22), is kept at a reasonable and economic level.
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