GAS ISOLATION CHAMBER AND PLASMA DEPOSITION APPARATUS THEREOF
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United States of America Patent
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Issued Date -
Apr 17, 2014
app pub date -
May 31, 2013
filing date -
Oct 12, 2012
priority date (Note) -
Abandoned
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Abstract
A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.
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