METHOD FOR DEVELOPING LOW DIELECTRIC CONSTANT FILM AND DEVICES OBTAINED THEREOF
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United States of America Patent
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Issued Date -
Apr 10, 2014
app pub date -
Oct 3, 2013
filing date -
Oct 4, 2012
priority date (Note) -
Abandoned
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Abstract
A method for porogen removal of porous SiOCH film is provided, as well as devices obtained thereof. The devices and associated methods are in the field of advanced semiconductor interconnect technology, and more in particular in the development of dielectric films with low-k value.
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