Atomic layer deposition of quaternary chalcogenides

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United States of America Patent

PATENT NO 8741386
APP PUB NO 20140093645A1
SERIAL NO

13631135

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Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

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Patent Owner(s)

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UCHICAGO ARGONNE LLC5801 SOUTH ELLIS AVENUE CHICAGO IL 60637

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Elam, Jeffrey W Elmhurst, US 99 3198
Martinson, Alex B F Woodridge, US 7 30
Pellin, Michael J Naperville, US 41 1042
Riha, Shannon C Park Ridge, US 2 22
Thimsen, Elijah J Chicago, US 3 446

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