COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Apr 3, 2014
app pub date -
Aug 27, 2013
filing date -
Sep 28, 2012
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Abandoned
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Abstract
An AlGaN/GaN.HEMT includes: a compound semiconductor layered structure; and an interlayer insulating film that covers a surface of the compound semiconductor layered structure, the interlayer insulating film including a first insulating film and a second insulating film that is formed on the first insulating film to fill irregularities on a surface of the first insulating film and has a flat surface.
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