COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20140092636A1
SERIAL NO

13975713

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Abstract

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A gate electrode is formed above a compound semiconductor stacked structure, and the gate electrode includes a stack of a TaN:Al layer in which Al is solid-dissolved in TaN, a TaAlN layer made of a compound of TaN and Al, and an Al layer.

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Patent Owner(s)

Patent OwnerAddress
TRANSPHORM JAPAN INCSHIN-YOKOHAMA CENTER BLDG 9F 2-5-15 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanamura, Masahito Isehara, JP 33 1077
YOSHIKI, Jun Aizuwakamatsu, JP 1 6

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