COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Apr 3, 2014
app pub date -
Aug 1, 2013
filing date -
Sep 28, 2012
priority date (Note) -
Abandoned
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Abstract
An AlGaN/GaN HEMT includes: an electron transit layer; an electron supply layer formed above the electron transit layer; and a gate electrode formed above the electron supply layer, wherein a p-type semiconductor region is formed only at a site of the electron transit layer which is contained in a region below the gate electrode.
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