MEMORY DEVICES AND METHODS HAVING WRITE DATA PERMUTATION FOR CELL WEAR REDUCTION
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United States of America Patent
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Sep 25, 2012
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Sep 25, 2012
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Abstract
A memory system can include a plurality of memory elements each comprising a memory layer having at least one layer programmable between at least two different impedance states; a data input configured to receive multi-bit write data values; and a permutation circuit coupled between the memory elements and the data input, and configured to repeatedly permute the multi-bit write data values prior to writing such data values into the memory elements.
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